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Micro and nanostructural modification
of antimony selenide thin films
by laser and electron beam irradiation
Introduction
Structure
1. SbxSe100-x thin film etching rate in organic based solution e.g. amines depends on antimony percentage in compound. The crystalline region remains insoluble (V=0).
2. Laser and EB irradiation causes the crystallization of the Sb-Se amorphous films. Thin
film crystallization by laser beam starts from its surface, while the e-beam induced
crystallization begins at the metal/ChG boundary in the center of exposed spot,
extending radially and along the electrons propagation axis.
3. SbxSe100-x thin films laser irradiation followed by etching in organics based solution
leads to the relief formation, its profile characteristics depend on the composition.
4. Sb40Se60 thin films are suitable for EB lithography: the resolution of such a film
is ~ 1μm. Using the gray scale e-beam lithography it is possible to form relief in a
ChG thin film in a one step process (without etching stage).
5. The e-beam interaction with the ChG thin film phenomenologically
repeats the droplet impinging on a liquid surface.
Actuality & Application
of
by
Micro and nanostructural modification
antimony selenide thin films
laser and electron beam irradiation
1. To study the etching process of as deposited, as well as
laser and electron beam exposed SbxSe100x thin films in
organic etchants.
2. To investigate the surface topography and the structure of
exposed and unexposed areas of the films SbxSe100-x
before and after the chemical etching.
3. To study the metal sublayer effect, as well as that of
electron beam parameters on surface modification under
e-beam irradiation.
4. To estimate the possibility to use Sb-Se thin films for the
electron beam lithography.
To investigate the Sb-Se thin film modification processes induced by laser and electron beam
Contents
Methodology
Sample processing
Sb50Se50
SbxSe100-x
Metal
Sb40Se60
Glass
substrate
SbxSe100-x
Metal
Sb20Se80
Glass substrate
X-ray diffraction picture for as-deposited
Sb-Se thin films
Methods
• Electron Microscopy
• Confocal Optical Microscopy
• Atomic Force Microscopy
• Laser Spectroscopy
• X-ray Difractometry
• Energy Dispersive Spectrometry
• Electron BackScatter Kikuchi Diffraction (EBSD) methodology
• Optical Lithography
• Electron Lithography
Developed contactless method for in-situ real time monitoring of the
etching process
A schematic of the experimental wet-etching setup;
Alpha=0 in the case of using Leica TCSSPE microscope
The optical microscope image of irradiated Sb40Se60 thin films
Time dependent reflected signal during chemical etching of amorphous Sb-Se thin films
1. Introduction
2. Methodology
3. Research Results
4. Summary
Research Results
EB induced changes
in Sb-Se thin films
The EB interaction with the ChG thin film phenomenologically repeats the droplet impinging on a liquid surface phenomenon.
Etching behavior of Sb-Se thin films
Amorphous SbxSe100-x‐ thin film etching rate in organic based solution e.g. amines depends on antimony percentage in compound. The crystalline region remains insoluble (υV=0).
Etching behavior of Sb-Se thin films
Thesis 1.
SbxSe100-x‐ thin film etching rate in organic based
solution e.g. amines depends on antimony percentage
in compound. The crystalline region remains insoluble (υV=0).
Etching behavior of Sb-Se thin films
Thesis 1.
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подтверждаются экспериментально. Значит ли это, что ваша теория
правильна? Нет, просто-напросто это значит,
что вам не удалось ее опровергнуть.
SbxSe100-x‐ thin film etching rate in organic based solution e.g. amines depends on antimony percentage in compound. The crystalline region remains insoluble (υV=0).
Dependence of etching rate on at.% Sb
for SbхSe100-х thin films
R. Feinman
Time dependent reflected signal during etching of amorphous/crystallized and annealed (85 and 115°C) Sb20Se80 thin films
Sb40Se60
as an e-beam resist
Crystallization of Sb-Se thin films
Sb40Se60 thin films are suitable for EB lithography; its resolution is ~ 1μm. It is possible one step relief fabrication in ChG thin films (without etching stage) by gray scale EBL.
Laser and EB irradiation causes the crystallization of the Sb-‐Se amorphous films. Thin film crystallization by laser beam starts from its surface, while the e-‐beam induced crystallization begins at the metal/ChG boundary in the center of exposed spot, extending radially and along the electrons propagation axis.
Sb40Se60
as an e-beam resist
Sb40Se60 thin films are suitable for EB lithography; its resolution is ~ 1μm. It is possible one step relief fabrication in ChG thin films (without etching stage) by gray scale EBL.
Crystallization of Sb-Se thin films
Sb40Se60
as an e-beam resist
Laser and EB irradiation causes the crystallization of the Sb-‐Se amorphous films. Thin film crystallization by laser beam starts from its surface, while the e-‐beam induced crystallization begins at the metal/ChG boundary in the center of exposed spot, extending radially and along the electrons propagation axis.
Sb40Se60 thin films are suitable for EB lithography; its resolution is ~ 1μm. It is possible one step relief fabrication in ChG thin films (without etching stage) by gray scale EBL.
Sb40Se60
Se
Sb2O4
The distribution function of an average grain size
EBSD map of the e-beam irradiated area of Sb2Se3 thin film
The distribution function of the largest grain size
X-ray diffraction picture of Sb-Se thin films after laser treatment
Crystallization of Sb-Se thin films
Laser and EB irradiation causes the crystallization of the Sb-‐Se amorphous films. Thin film crystallization by laser beam starts from its surface, while the e-‐beam induced crystallization begins at the metal/ChG boundary in the center of exposed spot, extending radially and along the electrons propagation axis.
Relief formation
SbхSe100‐х thin films laser irradiation followed by etching in organics ‐based solution leads to the relief formation, its profile characteristics depend on the composition.
Sb
Se
50
Sb
Se
20
80
Sb
Se
40
60
Summary
Conclusion
Acknowledgements
1. High etching selectivity of Sb-Se thin films in the organic
based solution.
2. The etching rate depends on the Sb percentage in compound.
3. E-beam or laser beam treatment leads to crystallization.
4. E-beam and laser beam can modify surface of ChG thin film.
5. It is possible to create the relief in Sb-Se thin films directly.
6. ChG thin film surface modification process by EB and
the drop collision with a free liquid surface
have a number of similarities.
Publications
Conferences
4. Oksana Shiman, Vjačeslavs Gerbreders, Eriks Sledevskis, Andrejs Bulanovs
„Surface modification of SbSe thin films by laser irradiation and etching”, (2012)
doi: 10.2478/v1004701200055
5. O. Shiman, V. Gerbreders, E. Sledevskis, A. Bulanovs
“Selective Wet-Etching of Amorphous/Crystallized SbSe Thin Films”, (2012)
doi: 10.2478/v1004701200108
8. Oksana Šimane
„Excimer Laser and Electron Beam Irradiation
Effects in Sb40Se60 Thin Films”, (2012)
6. O. Shiman, V. Gerbreder, E. Sledevsky, A. Bulanov
“Electric conductivity of Sb/Se thin film microscale structures”, (2011)
doi: 10.2478/v1004701100069
7. O. Shiman, V. Gerbreders, E. Sledevskis, A. Bulanovs, V.Pashkevich
„Selective wet-etching of amorphous/crystallized Sb20Se80 thin films”, (2011)
http://www.waset.org/journals/waset/v75/v75147.pdf
1. Oksana Shiman, Vjaceslavs Gerbreders, Arnis Gulbis
"The interaction between electron beam and amorphous chalcogenide films”, (2012)
doi: 10.1016/j.jnoncrysol.2012.05.042
2. Oksana Shiman, Vjaceslavs Gerbreders, Eriks Sledevskis, Valfrids Paskevics
„Electron beam induced surface modification of amorphous Sb2Se3 thin film”, (2012)
doi: 10.1016/j.jnoncrysol.2012.02.013
3. Vadims Kolbjonoks, Vjačeslavs Gerbreders, Oksana Šimane
"Nanostructure formation on metal-chalcogenide surface using electron beam irradiation“, (2011)
doi:10.1016/j.jnoncrysol.2010.12.017.
1. The 11th International Conference on Global Research and Education, Budapest, Hungary
2. International Symposium on NonOxide and New Optical Glasses (XVIII ISNOG), StMalo, France
3. 14th International Materials, Methods and Technologies Symposium, Sunny Beach, Bulgaria
4. 1st International Science Congress ISC2011, Indore, India
5. International Conference "Advanced Optical Materials and Devices" (AOMD7), Vilnius, Lithuania
6. International Conference for Academic Disciplines, Toronto, Ontario, Canada
7. SPIE Optics Optoelectronics 2011, Prague, Czech Republic
9. Oksana Shiman
„Wet-etching of SbSe thin films of stoichiometric compound and with excess selenium”
10. Oksana Šimane
„Stehiometriska sastāva Sb2Se3 plāno kārtiņiu elektrisko īpašbu izmaiņas fāžu pārejas amorfs/kristlisks stāvoklis gadījumā”
11. Oksana Šimane
„Optiskās, elektriskās īpašības un kristalizācijas procesi Sb-Se plānas kārtiņās”
8. International Conference on Nanotechnology: Fundamentals and Applications, Ottawa, Canada
9. 17th International Symposium on NonOxide and New Optical Glasses (XVII ISNOG), Ningbo, China
10. International conference "Functional materials and nanotechnologies", Rīga, Latvia
12. Оксана Шимане
„Изменение электропроводности тонких пленок Sb2Se3 при кристаллизации”
13. Oksana Simane, Vjaceslavs Gerbreders, Vadims Kolbjonoks
“Photo and heat stimulated changes in Sb/Se bilayered thin films”
14. Vadims Kolbjonoks, Vjaceslavs Gerbreders, Oksana Simane
"Nanostructure formation on metalchalcogenide surface using electron beam irradiation"
11. Международная научнопрактическая конференция, Pskov, Russia
12. 4th International Conference on Amorphous and Nanostructured Chalcogenides, Constanta, Romania
13-15. 25, 26 and 28th scientific conferences, Institute of Solid State Physics University of Latvia, Rīga, Latvija, 2009-2012.
16-19. 51-54th International Scientific Conferences of Daugavpils University, Daugavpils, Latvia, 2009-2012.