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ISCP 2012- Sinaia


fl jp

on 16 May 2013

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Transcript of ISCP 2012- Sinaia

Photoresist masks for
near-field processing Florin Jipa, Marian Zamfirescu, Mihaela Filipescu, Adrian Dinescu, Razvan Dabu Conclusion Thank you for your attention! And one more thing... is here National Institute for Laser Plasma and Radiation Physics, Romania Conventional laser near-field processing Laser beam material to process Laser work station setup colloidal particles Gold film~50nm Hexagonal pattern OrmoCore Photopolymer Unique features
Photo patterning inorganic-organic hybrid polymers
– UV patterning (lithography/ moulding)
– Exposure: UV, IR femtosecond lasers
– Low optical loss at IR wavelengths
- Thermally stable up to 270 °C Applications:
For manufacture of
– Multimode wave guides
– Singlemode wave guides
– Beam splitters
– Thermooptical switches Oscillator laser Synergy Laser parameters:
5 nJ maximum energy
80 MHz repetition rate
800 nm central wavelength
10 fs puls duration Processing methods:
- UV lithography
- Electron/ion beam lithography
- X-ray lithography
- Laser beam lithography
UV lasers
Femtosecond lasers (Two Photon Photopolymerization) Laser Clark CPA Applications:
Amplifier seeding
Coherent THz generation
Optical Coherence Tomography
Multiphoton microscopy
Time-resolved spectroscopy
Low energy materials processing Laser parameters:
700 µJ maximum energy
2 kHz repetition rate
775 nm central wavelength
200 fs pulse duration Applications:
laser ablation
direct laser writing (DLW)
time-resolved fluorescence
confocal microscopy
fluorescence microscopy Experimental setup Laser Clark CPA Microstructures obtained in Si material Microstructures obtained in Si material Laser processing parameters:
Focusing lens with 75 mm focal length.
Diameter of the focused laser (expanded 10 mm)~530 micrometrii.
Laser fluency 0.15 J/cm2 (under damage threshold (0.68 J/cm2) ) Photopolymer lines Two Photon Photopolymerization UV absorption vs. NIR two photons absorption UV absorption: occurs in all the irradiated volume of the material.
Fs-NIR absorption : occurs only at the waist of the focused fs laser beam.

When the laser fluence is kept just above the threshold the material will be processed with precision under the diffraction limit. -Micro-holes and micro-channels were imprinted in
Si material by laser near field processing using
photopolymer mask.
-Arbitrary patterns can be produced by this method,
not only patterns with hexagonal configuration.
-Large area can be processed using one single laser
The photopolymer mask can be reused for serial processing, because the photopolymer damage threshold it is much higher (1.7J/cm2 for SU-8) compared with metals. Conventional near-field method visualization module focusing optics high precision XYZ translation stage material to process IR Femtosecond Laser Beam photopolymer microstructures glass substrate UV laser IR Femtosecond laser http://ssll.inflpr.ro PC Photopolymer mask used Laser processing parameters:
Focusing lens with 75 mm focal length.
Diameter of the focused laser (expanded 10 mm)~530 micrometrii.
Laser fluency 0.2 J/cm2 (under damage threshold for Si (0.68J/cm2) material) 5 microns gap between polymers pillars Outline:
- Conventional laser near-field method.
- Laser near-field using photopolymer mask.
- Laser work station setup.
- Experimental results.
- Conclusions. colloidal particles transparent photopolymer cylinders
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