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Design of Threshold Voltage Extractor as a Readout Circuit f
Transcript of Design of Threshold Voltage Extractor as a Readout Circuit f
Christian Benedict S. Angeles
James Ruel N. Camiña
Jeicel Joy M. Dela Cruz
Yazmin Y. Macabuhay
Engr. Febus Reidj Cruz
Engr. Ramon G. Garcia
Pier Bergveld in 1973
Ion- Sensitive Field Effect Transistor
Cross-Section View of an ISFET Structure
- To design a Threshold Voltage Extractor Based Circuit that will incorporate Temperature Compensation
- To perform Ion-Sensitive Field Effect Transistor characterization such as determination of pH sensitivity and Temperature Coefficient
- To implement the design in a prototype PCB to conduct actual testing.
He pioneered ISFET device when he was measuring the ionic in and effluxes around a nerve in 1973
Check out "Development of an ion sensitive solid-state device for neurophysiological measurement"
To work on the improvement of the existing Threshold Voltage Extractor Circuit
To be implantable to human for medicinal accounts e.g. glucose measurements
for sensor-based applications
limited to pH buffer solutions of 4, 7, 10
will cover on the electronics design aspect of the study
will not work on further test in relation of ion activity (pH) hereof.
Some deduce Temperature Compensation Circuits uses OP-amp, hence has higher power consumption
check out "New ISFET interface circuit design with temperature compensation" , Wen-Yaw Chung
We're here to present to you on how would we want to respond to the problems being discussed earlier.
Looking at the previous work, entitled,
"VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation"
Check out ""VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation" on IEEE
Problems on ISFET
The result of the ISFET threshold voltage is being affected by Temperature since, this is from the nature of MOSFET
Derivation of operation of
Threshold Voltage Extractor
Sizing of MOS transistors in
Threshold Voltage Extractor
Derivation of Operation
Sizing of Transistors
Determining of ISFET
Determining ISFET Temperature Coefficient
ISFET Temperature Coefficient
Temperature coefficient = ∆V/∆T
What do we learn so far?
That we can compensate both the Temperature effect and Voltage Exatractor of ISFET to have a more accurate measurement for further applications in aid for the betterment of humanity
Check out "CMOS Readout Circuit Development For Ion-Sensitive Transistor Based Sensor Applications" by Reidj Cruz, et.al 2010
A.van den Berg, M. Koudelka-Hep, B.H. van der Schoot and N.F. de Rooij, From biochip to integrated biochemical analysis system, IMT, University of Neuchbtel, A.-L. Breguet 2, CH-2000 Neuchatel
Bergveld, P. (1970), Development of an ion sensitive solid-state device for neurophysiological measurement, IEEE Trans. Biomed. Eng., Vol. 17, 1970, 70-71
P. Bergveld, Development, operation and application of the ion sensitive field effect transistor as a tool for electrophysiology, IEEE Trans. Biomed. Eng. BME –19 (1972) 342-351
Vianello F, Stefani A, dipaolo ML, Rigo A, Lui A, Margesin B,et al. Potentiometric detection of formaldehyde in air by an aldehyde dehydrogenase FET. Sensors and Actuators, B 1996; 37:49-54
Starodub VM and Starodub NF, Electrochemical immune sensors based on the ion-sensitive field effect transistor for the development of the level of myoglobin. The 13th European Conference on Solid-State Transducers, September 12-15, 1999
D. Landheer, G. Aers, W.R Mckinnon, M.J.Deen, J.C. Ranuarez, Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors. Journal of applied physics 98, 044701 (2005)
Dr. Jiten Ch. Dutta, Ion Sensitive Field Effect Transistor for Applications in Bioelectronic Sensors: A Research Review, 978-1-4577-0720-9/12/©2012 IEEE
Tai-Tsun Liu, Wen-Yaw Chung, Febus Reidj G. Cruz, You-Lin Tsai, Dorota G. Pijanowska, Wladyslaw Torbicz, Piotr B. Grabiec, and Bohdan Jaroszewicz, VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation, 1-4244-0637-4/07/ ©2007 IEEE, pp. 901-904
Wen-Yaw Chung, Febus Reidj G. Cruz, Chung-Huang Yang, Fu-Shun He, Tai-Tsun Liu, Dorota G. Pijanowska, Wladyslaw Torbicz, Piotr B. Grabiec and Bohdan Jarosewicz (2010). CMOS Readout Circuit Developments for Ion Sensitive Field Effect Transistor Based Sensor Applications, Solid State Circuits Technologies, Jacobus W. Swart (Ed.), ISBN: 978-953-307-045-2, InTech
Keun- Yong Park, Sang-Bok Choi, Minho Lee, Byung-Ki Sohn, Sie-Young Choi, ISFET glucose sensor system with fast recovery characteristics by employing electrolysis, Sensors and Actuators B 4169 (2002) pp.1-8 ©2002
Arkadiy Morgenshtein, Liby Sudakov-Boreysha, Uri Dinnar, Claudio G. Jakobson, Yael Nemirovsky, CMOS readout circuitry for ISFET microsystems, Sensors and Actuators B 97 (2004) 122–131
E. Guerrero, M.T. Sanz-Pascual, J. Molina-Reyes, N. Medrano, B. Calvo, A Digitally Programmable Calibration Circuit for Smart Sensors, CONACYT CB-SEP-2008-01-99901 Research Project
Wen-Yaw Chung, Chung-Huang Yang, Yaw-Feng Wang, Yi-Je Chan, W. Torbicz, Dorota G. Pijanowska, A signal processing ASIC for ISFET-based chemical sensors, Microelectronics Journal 35 (2004) 667–675
Ajay K KATTEPUR, LING Keck Voon, Jean YONG Wan Hong, ISFET Biosensors for In Situ Measurement of pH in Plants, The Hong Kong Institution of Engineers Transactions, Vol 14, No 3, pp1-5
Yuan-Lung Chin, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Shen-Kan Hsiung, A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process, Sensors and Actuators B 76 ©2001, Elsevier Science B.V pp. 582-593
M.P.Das, M.Bhuyan, Drift and Temperature Compensation Scheme for an Intelligent Ion-sensitive Field Effect Transistor Sensory System, 978-1-4673-2620-9/12/©2012 IEEE
Jed Harrison, Slodoban Petrovic, Xizhong Li, Elisabeth M.J Verpoorte, Alem Teclemariam, Alebachew Demoz, Integrated Ion Sensors: How much more should be done?, IEEE 1990, pp 165-167
P. K. Chan and D. Y. Chen, A CMOS ISFET Interface Circuit With Dynamic
Current Temperature Compensation Technique, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, VOL. 54, NO. 1, JANUARY 2007
Zhenhua Wang, Automatic VT Extractors Based on an n x n2 MOS Transistor Array and Their Application, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 27. NO 9. SEPTEMBER 1992