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Design of Threshold Voltage Extractor as a Readout Circuit f

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Christian Angeles

on 11 December 2013

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Transcript of Design of Threshold Voltage Extractor as a Readout Circuit f

Design of Threshold Voltage Extractor as a Readout Circuit for Ion-Sensitive Field Effect Transistor with Temperature Compensator
Introduction
ISFET
Christian Benedict S. Angeles
James Ruel N. Camiña
Jeicel Joy M. Dela Cruz
Yazmin Y. Macabuhay

Engr. Febus Reidj Cruz
Engr. Ramon G. Garcia

Objectives
Significance
Scope
Pier Bergveld in 1973
Ion- Sensitive Field Effect Transistor
ISFET
Cross-Section View of an ISFET Structure
Objectives
- To design a Threshold Voltage Extractor Based Circuit that will incorporate Temperature Compensation

- To perform Ion-Sensitive Field Effect Transistor characterization such as determination of pH sensitivity and Temperature Coefficient

- To implement the design in a prototype PCB to conduct actual testing.
Pier Bergveld
He pioneered ISFET device when he was measuring the ionic in and effluxes around a nerve in 1973
Check out "Development of an ion sensitive solid-state device for neurophysiological measurement"
Significance
To work on the improvement of the existing Threshold Voltage Extractor Circuit
To be implantable to human for medicinal accounts e.g. glucose measurements
Scope
for sensor-based applications

limited to pH buffer solutions of 4, 7, 10

will cover on the electronics design aspect of the study
will not work on further test in relation of ion activity (pH) hereof.
Some deduce Temperature Compensation Circuits uses OP-amp, hence has higher power consumption
check out "New ISFET interface circuit design with temperature compensation" , Wen-Yaw Chung
We're here to present to you on how would we want to respond to the problems being discussed earlier.
Looking at the previous work, entitled,
"VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation"
Check out ""VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation" on IEEE
Problems on ISFET
The result of the ISFET threshold voltage is being affected by Temperature since, this is from the nature of MOSFET
Methodology
Derivation of operation of
Threshold Voltage Extractor
Sizing of MOS transistors in
Threshold Voltage Extractor
ISFET Characterization
PROJECT DESIGN
PROJECT IMPLEMENTATION
Derivation of Operation
Sizing of Transistors
ISFET Characterization
Project Design
Project Implementation
Determining of ISFET
Sensitivity
Determining ISFET Temperature Coefficient
ISFET Sensitivity
ISFET Temperature Coefficient
Sensitivity= ∆V/∆pH
Temperature coefficient = ∆V/∆T
What do we learn so far?
ISFET Temperature
Voltage Extractor
That we can compensate both the Temperature effect and Voltage Exatractor of ISFET to have a more accurate measurement for further applications in aid for the betterment of humanity
Check out "CMOS Readout Circuit Development For Ion-Sensitive Transistor Based Sensor Applications" by Reidj Cruz, et.al 2010
References:
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