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My Dissertation

Synthesis and characterization of vertically aligned carbon nanofibers for nanoscale devices
by

farzan alavian ghavanini

on 24 October 2011

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Transcript of My Dissertation

Synthesis and characterization of vertically aligned carbon nanofibers for nanoscale devices
 
 


FARZAN ALAVIAN GHAVANINI
Department of Microtechnology and Nanoscience (MC2)
CHALMERS UNIVERSITY OF TECHNOLOGY
Göteborg, Sweden 2011
The space elevator
With carbon nanotube threads
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Damascus Blade
Contains carbon nanotubes
Picture adopted from Ref [1]
Picture adopted from Ref [2]
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Picture adopted from Ref [7]
Picture adopted from Ref [9]
Picture adopted from Ref [9]
Control over the position of VACNFs
Control over the diamater of VACNFs
Control over the length of VACNFs
And the vertical alignment
M. S. Haque et al., J. of Nanoscience and Nanotechnology (2008)
Adopted with permission from S. Hofmann et al., Diamond and Related Materials (2004), 13
High temperature Growth
Low temperature transfer
Adopted with permission from Fletcher et al., Advanced Materials (2006), 18
Localaized heat
Cold ambient
Adopted with permission from J. B. Park et al., Nanotechnology (2009), 20
What material is a suitable growth underlayer?
It should have a high melting point
It should show excellent temperature stability
It should not react ("poison") with the catalyst
Ti, Cr, W, Ta,
Alumina, Mo, Ir, Pt, ...
What about device related requirements?
It should possible to easily deposit it and pattern it
It should exhibit high electrical performance, i.e. low resistivity
Au, Cu, Ag ?
A low resistivity diffusion barrier
Ta / TaN Ti / TiN
Stoichiometry: Ti-0.68 N-0.32
Resistivity: 226 μΩcm
Oxygen content: 14 %
Pre-growth anneal
Pre-growth anneal
Stoichiometry: Ti-0.5 N-0.5
Resistivity: 37 μΩcm
Oxygen content: 6 %
80 W
Adopted with permission from Guillorn et al. J. Appl. Phys. (2002), 91
Adopted with permission from Jang et al.
Appl. Phys. Lett., (2005), 87
40 W
120 W
Plasma power
1000 nm
400 nm
5 nm - 100 nm
Oxide Thickness
There exists a plasma power-oxide thickness pair with minimal
substrate damage.
<5 nm
<5 nm
<5 nm
370 nm
260 nm
200 nm
980 nm
900 nm
850 nm
Regardless of the plasma power and oxide thickness choices
a portion of the oxide is etched.
Adopted with permission from Olofsson et al. Nanotech. (2009), 20
Growth Underlayer
Insulator
Silicon Substrate
Is silicon dioxide the right choice?
500 °C
390 °C
270 °C
Adopted with permission from E. Sunden et al., Appl. Phys. Lett. (2006), 88
Adopted with permission from M. S. Haque et al., Nanotechnology (2008), 19
Adopted with permission from H. J. Qi et al., J. of the Mechanics and Physics of Solids (2003), 51
Adopted with permission from A. Eriksson et al., Nano Lett. (2008), 8
Adopted with permission from A. B. Kaul et al., Nanotech. (2010), 21
E ~ 0.91 TPa - 1.24 TPa
E ~ 410 GPa
E ~ 816 GPa
Full transcript