Loading presentation...

Present Remotely

Send the link below via email or IM

Copy

Present to your audience

Start remote presentation

  • Invited audience members will follow you as you navigate and present
  • People invited to a presentation do not need a Prezi account
  • This link expires 10 minutes after you close the presentation
  • A maximum of 30 users can follow your presentation
  • Learn more about this feature in our knowledge base article

Do you really want to delete this prezi?

Neither you, nor the coeditors you shared it with will be able to recover it again.

DeleteCancel

Make your likes visible on Facebook?

Connect your Facebook account to Prezi and let your likes appear on your timeline.
You can change this under Settings & Account at any time.

No, thanks

PhD Thesis Defence

Solid State Physics
by

Oksana Simane

on 11 January 2013

Comments (0)

Please log in to add your comment.

Report abuse

Transcript of PhD Thesis Defence

1. Introduction
2. Methodology
3. Research Results
4. Summary Micro and nanostructural modification
of antimony selenide thin films
by laser and electron beam irradiation Contents Introduction 13-15. 25, 26 and 28th scientific conferences, Institute of Solid State Physics University of Latvia, Rīga, Latvija, 2009-2012.
16-19. 51-54th International Scientific Conferences of Daugavpils University, Daugavpils, Latvia, 2009-2012. 1. 3.
Oksana Šimane Publications Conferences Structure The scientific adviser of the Doctoral Thesis:
Dr. phys. Vjaceslavs Gerbreders, DU IMC lead researcher Daugavpils University
The Faculty of Natural Sciences and Mathematics
G.Liberts' Innovative Microscopy Centre • Electron Microscopy
• Confocal Optical Microscopy
• Atomic Force Microscopy
• Laser Spectroscopy
• X-ray Difractometry
• Energy Dispersive Spectrometry
• Electron BackScatter Kikuchi Diffraction (EBSD) methodology
• Optical Lithography
• Electron Lithography Methods 2. Conclusion 4.
62 pages
38 figures
4 tables
1 appendix (39 pages)
138 titles in References A series of scientific publications 13. Oksana Simane, Vjaceslavs Gerbreders, Vadims Kolbjonoks
“Photo and heat stimulated changes in Sb/Se bilayered thin films”

14. Vadims Kolbjonoks, Vjaceslavs Gerbreders, Oksana Simane
"Nanostructure formation on metalchalcogenide surface using electron beam irradiation" 8 papers in scientific journals 6 papers in conference proceedings 3. Vadims Kolbjonoks, Vjačeslavs Gerbreders, Oksana Šimane
"Nanostructure formation on metal-chalcogenide surface using electron beam irradiation“, (2011)
doi:10.1016/j.jnoncrysol.2010.12.017. 1. Oksana Shiman, Vjaceslavs Gerbreders, Arnis Gulbis
"The interaction between electron beam and amorphous chalcogenide films”, (2012)
doi: 10.1016/j.jnoncrysol.2012.05.042 2. Oksana Shiman, Vjaceslavs Gerbreders, Eriks Sledevskis, Valfrids Paskevics
„Electron beam induced surface modification of amorphous Sb2Se3 thin film”, (2012)
doi: 10.1016/j.jnoncrysol.2012.02.013 6. O. Shiman, V. Gerbreder, E. Sledevsky, A. Bulanov
“Electric conductivity of Sb/Se thin film microscale structures”, (2011)
doi: 10.2478/v1004701100069 4. Oksana Shiman, Vjačeslavs Gerbreders, Eriks Sledevskis, Andrejs Bulanovs
„Surface modification of SbSe thin films by laser irradiation and etching”, (2012)
doi: 10.2478/v1004701200055 5. O. Shiman, V. Gerbreders, E. Sledevskis, A. Bulanovs
“Selective Wet-Etching of Amorphous/Crystallized SbSe Thin Films”, (2012)
doi: 10.2478/v1004701200108 8. Oksana Šimane
„Excimer Laser and Electron Beam Irradiation
Effects in Sb40Se60 Thin Films”, (2012) Proceedings of the International Scientific Conferences of Daugavpils University, (2009-2011): 9. Oksana Shiman
„Wet-etching of SbSe thin films of stoichiometric compound and with excess selenium”

10. Oksana Šimane
„Stehiometriska sastāva Sb2Se3 plāno kārtiņiu elektrisko īpašbu izmaiņas fāžu pārejas amorfs/kristlisks stāvoklis gadījumā”

11. Oksana Šimane
„Optiskās, elektriskās īpašības un kristalizācijas procesi Sb-Se plānas kārtiņās” 12. Оксана Шимане
„Изменение электропроводности тонких пленок Sb2Se3 при кристаллизации” Abstracts of The International Conference on Nanotechnology: Fundamentals and Applications (2010): Псковское университетское обозрениe (2009): 2012 1. The 11th International Conference on Global Research and Education, Budapest, Hungary
2. International Symposium on NonOxide and New Optical Glasses (XVIII ISNOG), StMalo, France
3. 14th International Materials, Methods and Technologies Symposium, Sunny Beach, Bulgaria 2011 4. 1st International Science Congress ISC2011, Indore, India
5. International Conference "Advanced Optical Materials and Devices" (AOMD7), Vilnius, Lithuania
6. International Conference for Academic Disciplines, Toronto, Ontario, Canada
7. SPIE Optics Optoelectronics 2011, Prague, Czech Republic 2010 8. International Conference on Nanotechnology: Fundamentals and Applications, Ottawa, Canada
9. 17th International Symposium on NonOxide and New Optical Glasses (XVII ISNOG), Ningbo, China
10. International conference "Functional materials and nanotechnologies", Rīga, Latvia 2009 11. Международная научнопрактическая конференция, Pskov, Russia
12. 4th International Conference on Amorphous and Nanostructured Chalcogenides, Constanta, Romania To investigate the Sb-Se thin film modification processes induced by laser and electron beam Aim 1. To study the etching process of as deposited, as well as
laser and electron beam exposed SbxSe100x thin films in
organic etchants.

2. To investigate the surface topography and the structure of
exposed and unexposed areas of the films SbxSe100-x
before and after the chemical etching.

3. To study the metal sublayer effect, as well as that of
electron beam parameters on surface modification under
e-beam irradiation.

4. To estimate the possibility to use Sb-Se thin films for the
electron beam lithography. Objectives 3. SbxSe100-x thin films laser irradiation followed by etching in organics based solution
leads to the relief formation, its profile characteristics depend on the composition. Thesis Methodology Research Results Summary Developed contactless method for in-situ real time monitoring of the
etching process Sample processing Etching behavior of Sb-Se thin films Amorphous SbxSe100-x‐ thin film etching rate in organic based solution e.g. amines depends on antimony percentage in compound. The crystalline region remains insoluble (υV=0). Thesis 1. Time dependent reflected signal during etching of amorphous/crystallized and annealed (85 and 115°C) Sb20Se80 thin films Dependence of etching rate on at.% Sb
for SbхSe100-х thin films Crystallization of Sb-Se thin films Laser and EB irradiation causes the crystallization of the Sb-‐Se amorphous films. Thin film crystallization by laser beam starts from its surface, while the e-‐beam induced crystallization begins at the metal/ChG boundary in the center of exposed spot, extending radially and along the electrons propagation axis. Thesis 2. 1. SbxSe100-x thin film etching rate in organic based solution e.g. amines depends on antimony percentage in compound. The crystalline region remains insoluble (V=0). 2. Laser and EB irradiation causes the crystallization of the Sb-Se amorphous films. Thin
film crystallization by laser beam starts from its surface, while the e-beam induced
crystallization begins at the metal/ChG boundary in the center of exposed spot,
extending radially and along the electrons propagation axis. 4. Sb40Se60 thin films are suitable for EB lithography: the resolution of such a film
is ~ 1μm. Using the gray scale e-beam lithography it is possible to form relief in a
ChG thin film in a one step process (without etching stage). 5. The e-beam interaction with the ChG thin film phenomenologically
repeats the droplet impinging on a liquid surface. A schematic of the experimental wet-etching setup;
Alpha=0 in the case of using Leica TCSSPE microscope The optical microscope image of irradiated Sb40Se60 thin films Time dependent reflected signal during chemical etching of amorphous Sb-Se thin films Crystallization of Sb-Se thin films Laser and EB irradiation causes the crystallization of the Sb-‐Se amorphous films. Thin film crystallization by laser beam starts from its surface, while the e-‐beam induced crystallization begins at the metal/ChG boundary in the center of exposed spot, extending radially and along the electrons propagation axis. Thesis 2. Sb40Se60 Se Sb2O4 X-ray diffraction picture of Sb-Se thin films after laser treatment Relief formation SbхSe100‐х thin films laser irradiation followed by etching in organics ‐based solution leads to the relief formation, its profile characteristics depend on the composition. Thesis 3. 80 Se Sb 20 Sb40Se60
as an e-beam resist Sb40Se60 thin films are suitable for EB lithography; its resolution is ~ 1μm. It is possible one step relief fabrication in ChG thin films (without etching stage) by gray scale EBL. Thesis 4. Sb40Se60
as an e-beam resist Sb40Se60 thin films are suitable for EB lithography; its resolution is ~ 1μm. It is possible one step relief fabrication in ChG thin films (without etching stage) by gray scale EBL. Thesis 4 EB induced changes
in Sb-Se thin films The EB interaction with the ChG thin film phenomenologically repeats the droplet impinging on a liquid surface phenomenon. Thesis 5. R. Feinman У нас всегда есть возможность опровергнуть теорию, но, обратите внимание, мы никогда не можем доказать, что она правильна. Предположим, что вы выдвинули удачную гипотезу, рассчитали, к чему это ведет, и выяснили, что все ее следствия
подтверждаются экспериментально. Значит ли это, что ваша теория
правильна? Нет, просто-напросто это значит,
что вам не удалось ее опровергнуть. 1. High etching selectivity of Sb-Se thin films in the organic
based solution.

2. The etching rate depends on the Sb percentage in compound.

3. E-beam or laser beam treatment leads to crystallization.

4. E-beam and laser beam can modify surface of ChG thin film.

5. It is possible to create the relief in Sb-Se thin films directly.

6. ChG thin film surface modification process by EB and
the drop collision with a free liquid surface
have a number of similarities. 7. O. Shiman, V. Gerbreders, E. Sledevskis, A. Bulanovs, V.Pashkevich
„Selective wet-etching of amorphous/crystallized Sb20Se80 thin films”, (2011)
http://www.waset.org/journals/waset/v75/v75147.pdf Se 50 50 Sb Se Sb 60 40 Sb40Se60
as an e-beam resist Sb40Se60 thin films are suitable for EB lithography; its resolution is ~ 1μm. It is possible one step relief fabrication in ChG thin films (without etching stage) by gray scale EBL. Thesis 4 Etching behavior of Sb-Se thin films SbxSe100-x‐ thin film etching rate in organic based solution e.g. amines depends on antimony percentage in compound. The crystalline region remains insoluble (υV=0). Thesis 1. Etching behavior of Sb-Se thin films Thesis 1. SbxSe100-x‐ thin film etching rate in organic based
solution e.g. amines depends on antimony percentage
in compound. The crystalline region remains insoluble (υV=0). Acknowledgements antimony selenide thin films by of Micro and nanostructural modification laser and electron beam irradiation Actuality & Application Crystallization of Sb-Se thin films Laser and EB irradiation causes the crystallization of the Sb-‐Se amorphous films. Thin film crystallization by laser beam starts from its surface, while the e-‐beam induced crystallization begins at the metal/ChG boundary in the center of exposed spot, extending radially and along the electrons propagation axis. Thesis 2. SbxSe100-x Metal Glass substrate SbxSe100-x Metal Glass
substrate EBSD map of the e-beam irradiated area of Sb2Se3 thin film The distribution function of an average grain size The distribution function of the largest grain size X-ray diffraction picture for as-deposited
Sb-Se thin films Sb50Se50 Sb20Se80 Sb40Se60
Full transcript